CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy
arXiv:0904.0552 · doi:10.1016/j.nima.2009.03.249
Abstract
This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.
5 pages, 2 figures, submitted to Nucl. Instr. and Meth. A