Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Abstract

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

15 pages, 11 figures, submitted to Nuclear Instruments and Methods A

References in corpus (4)

• A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy
• Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels
• A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology
• Tracking and Vertexing with a Thin CMOS Pixel Beam Telescope

Cited by in corpus (6)

• R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
• Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation
• Physical limitations to the spatial resolution of solid-state detectors
• Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles
• Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders
• Position resolution with 25 um pitch pixel sensors before and after irradiation