Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

Abstract

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.

5 pages, 7 figures, submitted to Nuclear Instruments and Methods A

References in corpus (3)

• A Study of Monolithic CMOS Pixel Sensors Back-thinning and their Application for a Pixel Beam Telescope
• A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology
• Tracking and Vertexing with a Thin CMOS Pixel Beam Telescope