Termination Control of the Interface Dipole in LaSrMnO/Nb:SrTiO (001) Schottky Junctions
arXiv:0810.3084 · doi:10.1103/PhysRevB.79.073101
Abstract
In order to investigate the interface termination dependence of perovskite band alignments, we have studied the Schottky barrier height at LaSrMnO/Nb:SrTiO (001) heterointerfaces. As the Nb:SrTiO semiconductor was varied from TiO termination to SrO termination by variable insertion of a SrMnO layer, a large systematic increase in the Schottky barrier height was observed. This can be ascribed to the evolution of the interface dipole induced to screen the polar discontinuity at the interface, which gives a large internal degree of freedom for tuning band diagrams in oxides.
10 pages, 5 figures
References in corpus (6)
- Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
- Electronic reconstruction at SrMnO3-LaMnO3 superlattice interfaces
- Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions
- Lattice polarization effects on electron-gas charge densities in ionic superlattices
- Modulation Doping near Mott-Insulator Heterojunctions
- Strongly renormalized quasi-two-dimensional electron gas in a heterostructure with correlation effects