Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory

Abstract

The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hysteresis, domain theory at thermodynamical equilibrium can be used to determine the micromagnetic parameters. Combining magneto-optical Kerr microscopy, magnetometry and ferromagnetic resonance measurements, we obtain the characteristic parameter for magnetic domains ${\lambda }_c$, the domain wall width and specific energy, and the spin stiffness constant as a function of temperature. The nucleation barrier for magnetization reversal and the Walker breakdown velocity for field-driven domain wall propagation are also estimated.

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Cited by in corpus (14)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Irreversible magnetization switching using surface acoustic waves
• Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
• Field-Driven Domain-Wall Dynamics in GaMnAs Films with Perpendicular Anisotropy
• Exchange constant and domain wall width in (Ga,Mn)(As,P) films with self-organization of magnetic domains
• Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs
• Theory of spin waves in ferromagnetic (Ga,Mn)As
• Field-induced domain wall propagation: beyond the one-dimensional model
• Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
• Phenomenological theory of magnetization reversal in nanosystems with competing anisotropies
• Modified current induced domain wall motion in GaMnAs nanowire
• Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As
• Current Induced Fingering Instability in Magnetic Domain Walls