35% magnetocurrent with spin transport through Si

Abstract

Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where strong spin-scattering significantly reduces injected spin polarization) is eliminated by moving the FM in the spin injector from the tunnel junction base anode to the emitter cathode and away from the silicon surface. This results in over an order-of-magnitude increase in spin injection efficiency, from a previously-reported magnetocurrent ratio of ~2% to ~35% and an estimated spin polarization in Si from ~1% to at least ~15%. The injector tunnel-junction bias dependence of this spin transport signal is also measured, demonstrating the importance of low bias voltage to preserve high injected spin polarization.

References in corpus (2)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon

Cited by in corpus (5)

• Coherent spin transport through a 350-micron-thick Silicon wafer
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Experimental realization of a silicon spin field-effect transistor
• Non-ohmic spin transport in n-type doped silicon
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure