output
19972026
most citedThe SIESTA method for ab initio order-N materials simulation

12k citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

collaborating institutions
Showing 2019 · physics.app-phShow all

5 papers · 2 filters

physics.app-ph2019★ 4 cited

Trapping and electrical characterization of single core/shell iron-based nanoparticles in self-aligned nanogaps

Jacqueline Labra-Muñoz, Zorica Konstantinovic, Lluis Balcells +3

We report on the fabrication and measurements of platinum-self-aligned nanogap devices containing cubed iron (core)/iron oxide (shell) nanoparticles (NPs) with two average differen…

physics.app-ph2019★ 1 cited

Nanostructure engineering of epitaxial piezoelectric α-quartz thin films on silicon

Q. Zhang, D. Sánchez-garcia, R. Desgarceaux +8

The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we repo…

physics.app-ph2019★ 84 cited

Generation and imaging of magnetoacoustic waves over millimetre distances

Blai Casals, Nahuel Statuto, Michael Foerster +7

Using hybrid piezoelectric/magnetic systems we have generated large amplitude magnetization waves mediated by magneto-elasticity with up to 25 degrees variation in the magnetizatio…

physics.app-ph2019★ 86 cited

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu, I. Fina, R. Bachelet +5

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…

physics.app-ph2019★ 66 cited

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Jike Lyu, Ignasi Fina, Josep Fontcuberta +1

Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane orie…