activity
20132021
most citedEnhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

86 citations · 386 across the 8 of their papers we have counts for

collaborators

11 papers

physics.app-ph202168 cited

Polarization and resistive switching in epitaxial 2 nm HfZrO tunnel junctions

Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4

In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…

cond-mat.mtrl-sci202157 cited

Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films

Saul Estandia, Jaume Gazquez, Maria Varela +5

Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no sim…

cond-mat.mtrl-sci2020

Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon

Andrés Gomez, José Manuel Vila-Fungueiriño, Claire Jolly +8

Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a…

cond-mat.mtrl-sci202065 cited

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…

cond-mat.mtrl-sci202067 cited

Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices

Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez +3

Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallite…

cond-mat.mtrl-sci202017 cited

Enhancement in Thermally Generated Spin Voltage at Pd/NiFeO Interfaces by the Growth on Lattice-Matched Substrates

A. Rastogi, Z. Li, A. V. Singh +15

Efficient spin injection from epitaxial ferrimagnetic NiFeO thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. Th…