268 citations · 1.6k across the 21 of their papers we have counts for
21 papers
Detecting Linear Dichroism with Atomic Resolution
Roger Guzman, Ján Rusz, Ang Li +3
X-ray linear dichroism has been pivotal for probing electronic anisotropies, but its inherent limited spatial resolution precludes atomic-scale investigations of orbital polarizati…
Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Ka Ming Law, Arashdeep S. Thind, Mihir Pendharkar +7
We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron mic…
Polarization and resistive switching in epitaxial 2 nm HfZrO tunnel junctions
Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…
Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
Saul Estandia, Jaume Gazquez, Maria Varela +5
Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no sim…
Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon
Andrés Gomez, José Manuel Vila-Fungueiriño, Claire Jolly +8
Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a…
Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…
Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez +3
Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallite…
Enhancement in Thermally Generated Spin Voltage at Pd/NiFeO Interfaces by the Growth on Lattice-Matched Substrates
A. Rastogi, Z. Li, A. V. Singh +15
Efficient spin injection from epitaxial ferrimagnetic NiFeO thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. Th…
Rotational polarization nanotopologies in BaTiO3/SrTiO3 superlattices
Saul Estandia, Florencio Sanchez, Matthew F. Chisholm +1
Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations u…
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
Saul Estandia, Nico Dix, Jaume Gazquez +5
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 el…
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
J. Lyu, I. Fina, R. Bachelet +5
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…
Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction
Hari Babu Vasili, Matheus Gamino, Jaume Gazquez +5
Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It p…
Evaluation of microstructure and mechanical property variations in AlxCoCrFeNi high entropy alloys produced by a high-throughput laser deposition method
Mu Li, Jaume Gazquez, Albina Borisevich +2
Twenty-one distinct AlxCoCrFeNi alloys were rapidly prepared by laser alloying an equiatomic CoCrFeNi substrate with Al powder to create an alloy library ranging x=0.15-1.32. Varia…
Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nanometer to micrometer and mosaicity effects
M. Apreutesei, R. Debord, M. Bouras +9
High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by…
Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)
Mateusz Scigaj, Jaume Gazquez, Maria Varela +3
Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above…
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
D. Kriegner, K. Vyborny, K. Olejnik +10
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated anti…
Multiferroic Iron Oxide Thin Films at Room-Temperature
Marti Gich, Ignasi Fina, Alessio Morelli +5
In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orde…
Orientational tuning of the 2D-superconductivity in LaAlO3/SrTiO3 interfaces
G. Herranz, N. Bergeal, J. Lesueur +5
The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orient…
Solving and refining novel thin film phases using Cu X-ray radiation: the epitaxy-induced CuMnAs tetragonal phase
P. Wadley, A. Crespi, J. Gazquez +10
We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuKα radiation, only. The capabilit…
Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: Direct measurements with atomic-column spatial resolution
C. Cantoni, J. Gazquez, F. Miletto Granozio +8
The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3…
Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3
Paolo Perna, Davide Maccariello, Milan Radovic +9
We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron…