activity
20102025
most citedMultiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

268 citations · 1.6k across the 21 of their papers we have counts for

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Showing 2020Show all

4 papers · 1 filter

cond-mat.mtrl-sci2020

Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon

Andrés Gomez, José Manuel Vila-Fungueiriño, Claire Jolly +8

Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a…

cond-mat.mtrl-sci2020★ 65 cited

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…

cond-mat.mtrl-sci2020★ 67 cited

Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices

Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez +3

Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallite…

cond-mat.mtrl-sci2020★ 17 cited

Enhancement in Thermally Generated Spin Voltage at Pd/NiFeO Interfaces by the Growth on Lattice-Matched Substrates

A. Rastogi, Z. Li, A. V. Singh +15

Efficient spin injection from epitaxial ferrimagnetic NiFeO thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. Th…