86 citations · 386 across the 9 of their papers we have counts for
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physics.app-ph2021★ 68 cited
Polarization and resistive switching in epitaxial 2 nm HfZrO tunnel junctions
Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…
physics.app-ph2019★ 86 cited
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
J. Lyu, I. Fina, R. Bachelet +5
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced p…