activity
20102025
most citedMultiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

268 citations · 1.6k across the 21 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

17 papers · 1 filter

cond-mat.mtrl-sci2025

Detecting Linear Dichroism with Atomic Resolution

Roger Guzman, Ján Rusz, Ang Li +3

X-ray linear dichroism has been pivotal for probing electronic anisotropies, but its inherent limited spatial resolution precludes atomic-scale investigations of orbital polarizati…

cond-mat.mtrl-sci2023

Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films

Ka Ming Law, Arashdeep S. Thind, Mihir Pendharkar +7

We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron mic…

cond-mat.mtrl-sci2021★ 57 cited

Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films

Saul Estandia, Jaume Gazquez, Maria Varela +5

Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no sim…

cond-mat.mtrl-sci2020

Crystal Engineering and Ferroelectricity at the Nanoscale in Epitaxial 1D Manganese Oxide on Silicon

Andrés Gomez, José Manuel Vila-Fungueiriño, Claire Jolly +8

Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a…

cond-mat.mtrl-sci2020★ 65 cited

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Milena Cervo Sulzbach, Saúl Estandía, Xiao Long +7

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can b…

cond-mat.mtrl-sci2020★ 67 cited

Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices

Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez +3

Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallite…

cond-mat.mtrl-sci2020★ 17 cited

Enhancement in Thermally Generated Spin Voltage at Pd/NiFeO Interfaces by the Growth on Lattice-Matched Substrates

A. Rastogi, Z. Li, A. V. Singh +15

Efficient spin injection from epitaxial ferrimagnetic NiFeO thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. Th…

cond-mat.mtrl-sci2019★ 25 cited

Rotational polarization nanotopologies in BaTiO3/SrTiO3 superlattices

Saul Estandia, Florencio Sanchez, Matthew F. Chisholm +1

Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations u…

cond-mat.mtrl-sci2019★ 205 cited

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Saul Estandia, Nico Dix, Jaume Gazquez +5

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 el…

cond-mat.mtrl-sci2018★ 40 cited

Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction

Hari Babu Vasili, Matheus Gamino, Jaume Gazquez +5

Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It p…

cond-mat.mtrl-sci2017★ 158 cited

Evaluation of microstructure and mechanical property variations in AlxCoCrFeNi high entropy alloys produced by a high-throughput laser deposition method

Mu Li, Jaume Gazquez, Albina Borisevich +2

Twenty-one distinct AlxCoCrFeNi alloys were rapidly prepared by laser alloying an equiatomic CoCrFeNi substrate with Al powder to create an alloy library ranging x=0.15-1.32. Varia…

cond-mat.mtrl-sci2017★ 19 cited

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nanometer to micrometer and mosaicity effects

M. Apreutesei, R. Debord, M. Bouras +9

High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by…

cond-mat.mtrl-sci2015★ 13 cited

Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)

Mateusz Scigaj, Jaume Gazquez, Maria Varela +3

Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above…

cond-mat.mtrl-sci2015★ 268 cited

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

D. Kriegner, K. Vyborny, K. Olejnik +10

A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated anti…

cond-mat.mtrl-sci2014★ 203 cited

Multiferroic Iron Oxide Thin Films at Room-Temperature

Marti Gich, Ignasi Fina, Alessio Morelli +5

In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orde…

cond-mat.mtrl-sci2013★ 1 cited

Solving and refining novel thin film phases using Cu X-ray radiation: the epitaxy-induced CuMnAs tetragonal phase

P. Wadley, A. Crespi, J. Gazquez +10

We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuKα radiation, only. The capabilit…

cond-mat.mtrl-sci2010★ 135 cited

Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3

Paolo Perna, Davide Maccariello, Milan Radovic +9

We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron…