76 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Samsung Austin Semiconductor (United States)US3 papers
- Northeastern UniversityUS2 papers
- University of California San DiegoUS2 papers
- AkzoNobel (Netherlands)NL1 paper
- Alexandria UniversityEG1 paper
- Amazon (Germany)DE1 paper
- Ashoka UniversityIN1 paper
- Centre National de la Recherche ScientifiqueFR1 paper
- Institute of Physics and TechnologyKZ1 paper
- Laboratoire Albert FertFR1 paper
- Microsoft (United States)US1 paper
- Moscow Institute of Physics and TechnologyRU1 paper
3 papers · 2 filters
Modeling Transient Negative Capacitance in Steep-Slope FeFETs
Borna Obradovic, Titash Rakshit, Ryan Hatcher +2
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be ex…
On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications
J. A. Kittl, B. Obradovic, D. Reddy +3
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much…
Magnetic Tunnel Junction Performance Under Mechanical Strain
Niklas Roschewsky, Sebastian Schafer, Frances Hellman +1
In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point…