399 citations
- Moscow Institute of Physics and TechnologyRU29 papers
- Russian Academy of SciencesRU10 papers
- Northeastern UniversityUS9 papers
- National University of Science and TechnologyRU7 papers
- Centre National de la Recherche ScientifiqueFR6 papers
- ETH ZurichCH6 papers
- Karlsruhe Institute of TechnologyDE6 papers
- Max Planck Institute for Solid State ResearchDE6 papers
- Scuola Normale SuperioreIT6 papers
- University of Duisburg-EssenDE6 papers
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- AREA Science ParkIT5 papers
19 papers · 1 filter
Josephson magnetic rotary valve
I. I. Soloviev, N. V. Klenov, S. V. Bakurskiy +4
We propose a control element for a Josephson spin valve. It is a complex Josephson device containing ferromagnetic (F) layer in the weak-link area consisting of two regions, repres…
Quantum degradation of the second order phase transition
S. M. Stishov, A. E. Petrova, S. Yu. Gavrilkin +1
The specific heat, magnetization and thermal expansion of single crystals of antiferromagnetic insulator EuTe, measured at temperatures down to 2 K and in magnetic fields up to 90…
Conductance oscillations at the interface between a superconductor and the helical edge channel in a narrow HgTe quantum well
A. Kononov, S. V. Egorov, N. Titova +4
We experimentally investigate electron transport through the interface between a superconductor and the edge of a two-dimensional electron system with band inversion. The interface…
Detection of 2D electron g-factor sign inversion in narrow GaAs/AlGaAs quantum wells
V. V. Solovyev, W. Dietsche, I. V. Kukushkin
By means of CW polarization-resolved photoluminescence spectroscopy we demonstrate the sign inversion of -component of 2D electron g-factor with narrowing of a hosting GaAs/Al…
Interface Contributions to the Spin-Orbit Interaction Parameters of Electrons at the (001) GaAs/AlGaAs Interface
Zh. A. Devizorova, A. V. Shchepetilnikov, Yu. A. Nefyodov +2
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/AlGaAs quantum well have been studied theoretically and expe…
Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +3
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in s…