output
20182023
most citedAll CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

30 citations

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Showing 2018 · physics.app-phShow all

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physics.app-ph2018★ 30 cited

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

Himadri Pandey, Mehrdad Shaygan, Simon Sawallich +8

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitri…