output
20182023
most citedAll CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

30 citations

5 papers

physics.app-ph2023★ 6 cited

Reliable lift-off patterning of graphene dispersions for humidity sensors

Jorge Eduardo Adatti Estévez, Fabian Hecht, Sebastian Wittmann +6

Dispersion-based graphene materials are promising candidates for various sensing applications. They offer the advantage of relatively simple and fast deposition via spin-coating, L…

cond-mat.supr-con2023★ 30 cited

On-chip time-domain terahertz spectroscopy of superconducting films below the diffraction limit

Alex Potts, Abhay Nayak, Michael Nagel +5

Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy i…

physics.app-ph2022★ 19 cited

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Sebastian Wittmann, Stephan Pindl, Simon Sawallich +6

Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate…

physics.app-ph2022★ 25 cited

Role of substrate surface morphology on the performance of graphene inks for flexible electronics

Jasper Ruhkopf, Simon Sawallich, Michael Nagel +6

Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D…

physics.app-ph2018★ 30 cited

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

Himadri Pandey, Mehrdad Shaygan, Simon Sawallich +8

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitri…