Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- The University of TokyoJP429 papers
- Kyoto UniversityJP151 papers
- RIKENJP142 papers
- Tokyo Institute of TechnologyJP134 papers
- High Energy Accelerator Research OrganizationJP100 papers
- Tohoku UniversityJP100 papers
- Nagoya UniversityJP97 papers
- The University of OsakaJP96 papers
- Tokyo University of ScienceJP90 papers
- Japan Science and Technology AgencyJP68 papers
- UNSW SydneyAU63 papers
- Centre National de la Recherche ScientifiqueFR62 papers
9 papers · 2 filters
Electronic structure and transport properties of Cu-deficient kuramite Cu3-xSnS4
Yosuke Goto, Yuki Sakai, Yoichi Kamihara +1
Electrical and thermal transport properties of Cu-deficient kuramite Cu3-xSnS4 (CTS) was examined as a possible earth-abundant thermoelectric material. Crystallographic structure o…
Pulsed Low-Field Electrically Detected Magnetic Resonance
L. Dreher, F. Hoehne, H. Morishita +4
We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model syst…
Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex
Yoshikazu Mizuguchi, Atsushi Omachi, Yosuke Goto +5
We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electric…
Host isotope mass effects on the hyperfine interaction of group-V donors in silicon
T. Sekiguchi, A. M. Tyryshkin, S. Tojo +12
The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopic…
Effects of the Cu off-stoichiometry on transport properties of wide gap p-type semiconductor, layered oxysulfide LaCuSO
Yosuke Goto, Mai Tanaki, Yuki Okusa +4
Layered oxysulfide LaCuSO (x = 0-0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity dra…
Spin-dependent recombination at arsenic donors in ion-implanted silicon
David P. Franke, Manabu Ostuka, Takashi Matsuoka +4
Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent reco…
Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically-enriched silicon-28 crystal
P. Gumann, O. Patange, C. Ramanathan +9
We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration…
Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination
Pierre-André Mortemousque, Simon Berger, Takeharu Sekiguchi +3
Bismuth donors ion-implanted in Si and Si are studied using magnetic resonance spectroscopy based on spin dependent recombination. The hyperfine clock transitio…
Spin-dependent recombination involving oxygen-vacancy complexes in silicon
David P. Franke, Felix Hoehne, Leonid S. Vlasenko +2
Spin-dependent relaxation and recombination processes in -irradiated -type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected m…