95 citations
- McGill UniversityCA7 papers
- Dartmouth CollegeUS4 papers
- University of Hong KongHK4 papers
- Massachusetts Institute of TechnologyUS2 papers
- MIT Lincoln LaboratoryUS2 papers
- ARC Centre of Excellence in Future Low-Energy Electronics TechnologiesAU1 paper
- Australian Research CouncilAU1 paper
- Beihang UniversityCN1 paper
- Beijing Computational Science Research CenterCN1 paper
- Beijing Normal UniversityCN1 paper
- Centre de Nanosciences et de NanotechnologiesFR1 paper
- Centre for Quantum Computation and Communication TechnologyAU1 paper
5 papers · 1 filter
Electric control of spin in monolayer WSe2 field effect transistors
Kui Gong, Lei Zhang, Dongping Liu +4
We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the at…
Nonequilibrium Green's function theory for predicting device-to-device variability
Yu Zhu, Lei Liu, Hong Guo
Due to random dopant fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present theoretical formalisms and numerical…
Quantum Transport Theory with the Nonequilibrium Coherent Potentials
Yu Zhu, Lei Liu, Hong Guo
Since any realistic electronic device has some degree of disorder, predicting disorder effects in quantum transport is a critical problem. Here we report the theory of nonequilibri…
Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles
Yin Wang, Ferdows Zahid, Yu Zhu +3
Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We a…
Electronic structures of III-V zinc-blende semiconductors from atomistic first principles
Yin Wang, Haitao Yin, Ronggen Cao +5
For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electroni…