83 citations · 204 across the 6 of their papers we have counts for
6 papers
Composition dependent band offsets of ZnO and its ternary alloys
Haitao Yin, Junli Chen, Yin Wang +2
We report the calculated fundamental band gaps of \emph{wurtzite} ternary alloys ZnMO (M=Mg, Cd) and the band offsets of the ZnO/ZnMO heterojunctions, these…
Impurity-limited quantum transport variability in magnetic tunnel junctions
Jianing Zhuang, Yin Wang, Yan Zhou +2
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctio…
Direct tunneling through high- amorphous HfO: effects of chemical modification
Yin Wang, Zhizhou Yu, Ferdows Zahid +4
We report first principles modeling of quantum tunneling through amorphous HfO dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO/Al…
Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles
Yin Wang, Ferdows Zahid, Yu Zhu +3
Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We a…
Electronic structures of III-V zinc-blende semiconductors from atomistic first principles
Yin Wang, Haitao Yin, Ronggen Cao +5
For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electroni…
Structure and Dielectric Properties of Amorphous High-kappa Oxides: HfO2, ZrO2 and their alloys
Yin Wang, Ferdows Zahid, Jian Wang +1
High- metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the prop…