12 citations · 19 across the 3 of their papers we have counts for
3 papers
physics.app-ph2020★ 1 cited
Largely enhanced photogalvanic effects in the phosphorene photodetector by strain-increased device asymmetry
Juan Zhao, Yibin Hu, Yiqun Xie +2
Photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of the open-circuit voltage that is much larger than the bandgap, making it rather attra…
cond-mat.mtrl-sci2018★ 12 cited
High intrinsic in InP monolayer at room temperature
Shenghui Zhang, Xiaobin Niu, Yiqun Xie +4
Two-dimensional thermoelectric materials with a figure of merit , which is greater than 2.0 at room temperature, would be highly desirable in energy conversion since the effici…
cond-mat.mtrl-sci2018★ 6 cited
First principles investigation of pressure related quantum transport in pure black phosphorus devices
Ximing Rong, Zewen Wu, Zhizhou Yu +4
We propose a first-principles calculation to investigate the pressure-related transport properties of two kinds of pure monolayer black phosphorus (MBP) devices. Numerical results…