59 citations · 152 across the 8 of their papers we have counts for
8 papers
Josephson energy of superconducting junctions: amorphous versus crystalline tunnel barriers
Wanting Zhang, Aldilene Saraiva-Souza, Félix Beaudoin +3
The Josephson energy is a key parameter governing the properties of transmon superconducting qubits. In Al/AlO/Al junctions, is set by electron tunneling through an…
Analysis of Hydrogen Contamination in Al/AlOx/Al Josephson Junctions
Yu Zhu, Aldilene Saraiva-Souza, Félix Beaudoin +1
Hydrogen contamination in Josephson junctions is a potential source of device-to-device variability and two-level-system loss in superconducting qubits. In this work, we investigat…
First-principles predictions of band alignment in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures
Nathaniel M. Vegh, Pericles Philippopoulos, Raphaël J. Prentki +4
Accurate band offsets are essential for predictive continuum modeling of nanostructures such as quantum wells and quantum dots formed in strained Si/Si1-xGex and Ge/Si1-xGex hetero…
Direct tunneling through high- amorphous HfO: effects of chemical modification
Yin Wang, Zhizhou Yu, Ferdows Zahid +4
We report first principles modeling of quantum tunneling through amorphous HfO dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO/Al…
Electric control of spin in monolayer WSe2 field effect transistors
Kui Gong, Lei Zhang, Dongping Liu +4
We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the at…
Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles
Yin Wang, Ferdows Zahid, Yu Zhu +3
Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We a…