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20132026
most citedElectronic structures of III-V zinc-blende semiconductors from atomistic first principles

59 citations · 152 across the 8 of their papers we have counts for

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cond-mat.mtrl-sci2014★ 16 cited

Direct tunneling through high- amorphous HfO: effects of chemical modification

Yin Wang, Zhizhou Yu, Ferdows Zahid +4

We report first principles modeling of quantum tunneling through amorphous HfO dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO/Al…