59 citations · 204 across the 7 of their papers we have counts for
7 papers
Direct tunneling through high- amorphous HfO: effects of chemical modification
Yin Wang, Zhizhou Yu, Ferdows Zahid +4
We report first principles modeling of quantum tunneling through amorphous HfO dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO/Al…
Electric control of spin in monolayer WSe2 field effect transistors
Kui Gong, Lei Zhang, Dongping Liu +4
We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the at…
Nonequilibrium Green's function theory for predicting device-to-device variability
Yu Zhu, Lei Liu, Hong Guo
Due to random dopant fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present theoretical formalisms and numerical…
Quantum Transport Theory with the Nonequilibrium Coherent Potentials
Yu Zhu, Lei Liu, Hong Guo
Since any realistic electronic device has some degree of disorder, predicting disorder effects in quantum transport is a critical problem. Here we report the theory of nonequilibri…
Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles
Yin Wang, Ferdows Zahid, Yu Zhu +3
Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We a…
A generic tight-binding model for monolayer, bilayer and bulk MoS2
Ferdows Zahid, Lei Liu, Yu Zhu +2
Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-…