most citedBand offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles

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cond-mat.mtrl-sci2014★ 16 cited

Direct tunneling through high- amorphous HfO: effects of chemical modification

Yin Wang, Zhizhou Yu, Ferdows Zahid +4

We report first principles modeling of quantum tunneling through amorphous HfO dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO/Al…

cond-mat.mtrl-sci2013★ 44 cited

Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles

Yin Wang, Ferdows Zahid, Yu Zhu +3

Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We a…