120 citations
- Centre National de la Recherche ScientifiqueFR14 papers
- Institut PprimeFR8 papers
- Laboratoire de Mathématiques et ApplicationsFR3 papers
- École Nationale Supérieure de Mécanique et d'AérotechniqueFR2 papers
- La Rochelle UniversitéFR2 papers
- Pennsylvania State UniversityUS2 papers
- Brandeis UniversityUS1 paper
- City University of Hong KongHK1 paper
- École PolytechniqueFR1 paper
- ETH ZurichCH1 paper
- Institut de recherche mathématique de RennesFR1 paper
- Institute of Materials for Electronics and MagnetismIT1 paper
14 papers · 1 filter
Modular classes of Lie algebroid morphisms
Yvette Kosmann-Schwarzbach, Camille Laurent-Gengoux, Alan Weinstein
We study the behavior of the modular class of a Lie algebroid under general Lie algebroid morphisms by introducing the relative modular class. We investigate the modular classes of…
On the dual variable of the Cauchy stress tensor in isotropic finite hyperelasticity
Claude Vallee, Danielle Fortune, Camelia Lerintiu
If the constitutive law linking the second Piola-Kirchhoff stress tensor and the right Cauchy-Green strain tensor derives from a potential, then the Cauchy stress tensor and the lo…
Ab initio molecular dynamics calculations of threshold displacement energies in silicon carbide
Guillaume Lucas, Laurent Pizzagalli
Using first principles molecular dynamics simulations, we have determined the threshold displacement energies and the associated created defects in cubic silicon carbide. Contrary…
Theoretical study of dislocation nucleation from simple surface defects in semiconductors
Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1
Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Althoug…
Theoretical investigations of a highly mismatched interface: the case of SiC/Si(001)
Laurent Pizzagalli, Giancarlo Cicero, Alessandra Catellani
Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(0…
Comparison between classical potentials and ab initio for silicon under large shear
Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1
The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of…