most citedTheoretical study of dislocation nucleation from simple surface defects in semiconductors

79 citations · 324 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.other200724 cited

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

Pierre Hirel, Sandrine Brochard, Laurent Pizzagalli +1

Atomistic simulations using an EAM potential are carried out to investigate the first stages of plasticity in aluminum slabs, in particular the effect of both temperature and step…

cond-mat.mtrl-sci200749 cited

First principles determination of the Peierls stress of the shuffle screw dislocation in silicon

Laurent Pizzagalli, Pierre Beauchamp

The Peierls stress of the a/2<110> screw dislocation belonging to the shuffle set is calculated for silicon using density functional theory. We have checked the effect of boundary…

cond-mat.mtrl-sci200779 cited

Theoretical study of dislocation nucleation from simple surface defects in semiconductors

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Althoug…

cond-mat.mtrl-sci200747 cited

Comparison between classical potentials and ab initio for silicon under large shear

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of…

cond-mat.mtrl-sci200749 cited

Undissociated screw dislocations in silicon: calculations of core structure and energy

Laurent Pizzagalli, Pierre Beauchamp, Jacques Rabier

The stability of the perfect screw dislocation in silicon has been investigated using both classical potentials and first-principles calculations. Although a recent study by Koizum…

cond-mat.mtrl-sci20079 cited

Surface step effects on Si (100) under uniaxial tensile stress, by atomistic calculations

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading…