most citedAb initio molecular dynamics calculations of threshold displacement energies in silicon carbide

120 citations · 534 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.other200724 cited

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

Pierre Hirel, Sandrine Brochard, Laurent Pizzagalli +1

Atomistic simulations using an EAM potential are carried out to investigate the first stages of plasticity in aluminum slabs, in particular the effect of both temperature and step…

cond-mat.mtrl-sci2007120 cited

Ab initio molecular dynamics calculations of threshold displacement energies in silicon carbide

Guillaume Lucas, Laurent Pizzagalli

Using first principles molecular dynamics simulations, we have determined the threshold displacement energies and the associated created defects in cubic silicon carbide. Contrary…

cond-mat.mtrl-sci200749 cited

First principles determination of the Peierls stress of the shuffle screw dislocation in silicon

Laurent Pizzagalli, Pierre Beauchamp

The Peierls stress of the a/2<110> screw dislocation belonging to the shuffle set is calculated for silicon using density functional theory. We have checked the effect of boundary…

cond-mat.mtrl-sci200779 cited

Theoretical study of dislocation nucleation from simple surface defects in semiconductors

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Althoug…

cond-mat.mtrl-sci200730 cited

Theoretical investigations of a highly mismatched interface: the case of SiC/Si(001)

Laurent Pizzagalli, Giancarlo Cicero, Alessandra Catellani

Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(0…

cond-mat.mtrl-sci200747 cited

Comparison between classical potentials and ab initio for silicon under large shear

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of…