activity
20072024
most citedTheoretical study of dislocation nucleation from simple surface defects in semiconductors

79 citations · 252 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2024

The structural stability of tungsten nanoparticles

Laurent Pizzagalli, Sandrine Brochard, Julien Godet +1

Motivated by contradicting reports in the literature, we have investigated the structural stability of tungsten nanoparticles using density functional theory calculations. The comp…

cond-mat.mtrl-sci2009★ 40 cited

Glissile dislocations with transient cores in silicon

Laurent Pizzagalli, Julien Godet, Sandrine Brochard

We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 6…

cond-mat.other2007★ 24 cited

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

Pierre Hirel, Sandrine Brochard, Laurent Pizzagalli +1

Atomistic simulations using an EAM potential are carried out to investigate the first stages of plasticity in aluminum slabs, in particular the effect of both temperature and step…

cond-mat.mtrl-sci2007★ 79 cited

Theoretical study of dislocation nucleation from simple surface defects in semiconductors

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Althoug…

cond-mat.mtrl-sci2007★ 47 cited

Comparison between classical potentials and ab initio for silicon under large shear

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of…

cond-mat.mtrl-sci2007★ 9 cited

Surface step effects on Si (100) under uniaxial tensile stress, by atomistic calculations

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading…