most citedTheoretical study of dislocation nucleation from simple surface defects in semiconductors

79 citations · 212 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.other200724 cited

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

Pierre Hirel, Sandrine Brochard, Laurent Pizzagalli +1

Atomistic simulations using an EAM potential are carried out to investigate the first stages of plasticity in aluminum slabs, in particular the effect of both temperature and step…

cond-mat.mtrl-sci200779 cited

Theoretical study of dislocation nucleation from simple surface defects in semiconductors

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Althoug…

cond-mat.mtrl-sci200747 cited

Comparison between classical potentials and ab initio for silicon under large shear

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of…

cond-mat.mtrl-sci20079 cited

Surface step effects on Si (100) under uniaxial tensile stress, by atomistic calculations

Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1

This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading…

cond-mat.mtrl-sci200753 cited

Dislocation formation from a surface step in semiconductors: an ab initio study

Julien Godet, Sandrine Brochard, Laurent Pizzagalli +2

The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations…