activity
20032020
most citedValley splitting in strained silicon quantum wells

161 citations · 610 across the 11 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

9 papers · 1 filter

cond-mat.mes-hall2020★ 2 cited

Dispersive measurement of a semiconductor double quantum dot via 3D integration of a high-impedance TiN resonator

Nathan Holman, D. Rosenberg, D. Yost +5

Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spi…

cond-mat.mes-hall2019★ 12 cited

Majorana bound states in nanowire-superconductor hybrid systems in periodic magnetic fields

Viktoriia Kornich, Maxim G. Vavilov, Mark Friesen +2

We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations t…

cond-mat.mes-hall2018★ 21 cited

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim +11

We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well i…

cond-mat.mes-hall2012★ 109 cited

Coherent Quantum Oscillations in a Silicon Charge Qubit

Zhan Shi, C. B. Simmons, Daniel. R. Ward +10

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomoge…

cond-mat.mes-hall2011★ 13 cited

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Mingyun Yuan, Feng Pan, Zhen Yang +6

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combin…

cond-mat.mes-hall2009★ 64 cited

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford +11

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. S…