D. Tanner

activity

20162020

most citedElectronic structure evolution in dilute carbide Ge

_{1 - x}

_{x}

alloys and implications for device applications

12 citations · 12 across the 1 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2020

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…

cond-mat.mtrl-sci2019★ 12 cited

Electronic structure evolution in dilute carbide Ge $_{1 - x}$ C $_{x}$ alloys and implications for device applications

Christopher A. Broderick, Michael D. Dunne, Daniel S. P. Tanner +1

We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge $_{1 - x}$ C $_{x}$ . For ordered alloy supercells, we demon…

cond-mat.mtrl-sci2019

Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals

Daniel S. P. Tanner, Miguel A. Caro, Stefan Schulz +1

Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The m…

cond-mat.mtrl-sci2019

Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge $_{1 - x}$ Sn $_{x}$ alloys

Edmond J. O'Halloran, Christopher A. Broderick, Daniel S. P. Tanner +2

We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of Ge $_{1 - x}$ Sn$_{x…

physics.comp-ph2018

Hybrid functional study of non-linear elasticity and internal strain in zincblende III-V materials

Daniel S. P. Tanner, Miguel A. Caro, Stefan Schulz +1

We investigate the elastic properties of selected zincblende III-V semiconductors. Using hybrid functional density functional theory we calculate the second and third order elastic…

cond-mat.mtrl-sci2016

Random alloy fluctuations and structural inhomogeneities in $c$ -plane In $_{x}$ Ga $_{1 - x}$ N quantum wells: theory of ground and excited electron and hole states

Daniel S. P. Tanner, Miguel A. Caro, Eoin P. O'Reilly +1

We present a detailed theoretical analysis of the electronic structure of $c$ -plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic struc…

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

Electronic structure evolution in dilute carbide Ge1−x​Cx​ alloys and implications for device applications

Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals

Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge1−x​Snx​ alloys

Hybrid functional study of non-linear elasticity and internal strain in zincblende III-V materials

Random alloy fluctuations and structural inhomogeneities in c-plane Inx​Ga1−x​N quantum wells: theory of ground and excited electron and hole states

Electronic structure evolution in dilute carbide Ge $_{1 - x}$ C $_{x}$ alloys and implications for device applications

Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge $_{1 - x}$ Sn $_{x}$ alloys

Random alloy fluctuations and structural inhomogeneities in $c$ -plane In $_{x}$ Ga $_{1 - x}$ N quantum wells: theory of ground and excited electron and hole states