activity
20152022
most citedStructural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

65 citations · 206 across the 12 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2022★ 6 cited

Generalized relation between electromechanical responses at fixed voltage and fixed electric field

Daniel Bennett, Daniel Tanner, Philippe Ghosez +2

We present a general relation between the electromechanical couplings of infinitesimal strain and electric field to arbitrary order, measured at fixed voltage and at fixed electric…

cond-mat.mtrl-sci2021

Raman spectroscopy of group-IV GeSn alloys: theory and experiment

Daniel S. P. Tanner, Sreyan Raha, Jessica Doherty +5

GeSn alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here,…

cond-mat.mtrl-sci2021★ 5 cited

Divergent electrostriction at ferroelectric phase transitions: example of strain-induced ferroelectiricty in KTaO3

Daniel S. P. Tanner, Pierre-Eymeric Janolin, Eric Bousquet

We investigate the electrostrictive response across a ferroelectric phase transition from first-principles calculations and refute the prevailing view of constant electrostriction…

cond-mat.mtrl-sci2021

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Daniel S. P. Tanner, Christopher A. Broderick, Amy C. Kirwan +2

SiGe(C,Sn,Pb) alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - e…

cond-mat.mtrl-sci2020★ 14 cited

Optimized methodology for the calculation of electrostriction from first-principles

Daniel S. P. Tanner, Eric Bousquet, Pierre-Eymeric Janolin

In this work we present a new method for the calculation of the electrostrictive properties of materials using density functional theory. The method relies on the thermodynamical e…

cond-mat.mes-hall2020★ 52 cited

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…