D. Tanner

activity

20162021

most citedElectronic structure evolution in dilute carbide Ge

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alloys and implications for device applications

12 citations · 12 across the 2 of their papers we have counts for

collaborators

Showing cond-mat.mes-hallShow all

2 papers · 1 filter

cond-mat.mes-hall2020

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…

cond-mat.mes-hall2018

Interface roughness, carrier localization and wave function overlap in $c$ -plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

Daniel S. P. Tanner, Joshua M. McMahon, Stefan Schulz

In this work we present a detailed analysis of the interplay of Coulomb effects and different mechanisms that can lead to carrier localization effects in c-plane InGaN/GaN quantum…

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

Interface roughness, carrier localization and wave function overlap in c-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

Interface roughness, carrier localization and wave function overlap in $c$ -plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects