12 citations · 12 across the 2 of their papers we have counts for
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Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles
Daniel S. P. Tanner, Christopher A. Broderick, Amy C. Kirwan +2
SiGe(C,Sn,Pb) alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - e…
Electronic structure evolution in dilute carbide GeC alloys and implications for device applications
Christopher A. Broderick, Michael D. Dunne, Daniel S. P. Tanner +1
We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy GeC. For ordered alloy supercells, we demon…
Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals
Daniel S. P. Tanner, Miguel A. Caro, Stefan Schulz +1
Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The m…
Comparison of first principles and semi-empirical models of the structural and electronic properties of GeSn alloys
Edmond J. O'Halloran, Christopher A. Broderick, Daniel S. P. Tanner +2
We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of GeSn$_{x…
Random alloy fluctuations and structural inhomogeneities in -plane InGaN quantum wells: theory of ground and excited electron and hole states
Daniel S. P. Tanner, Miguel A. Caro, Eoin P. O'Reilly +1
We present a detailed theoretical analysis of the electronic structure of -plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic struc…