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20162021
most citedElectronic structure evolution in dilute carbide GeC alloys and implications for device applications

12 citations · 12 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2021

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Daniel S. P. Tanner, Christopher A. Broderick, Amy C. Kirwan +2

SiGe(C,Sn,Pb) alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - e…

cond-mat.mtrl-sci201912 cited

Electronic structure evolution in dilute carbide GeC alloys and implications for device applications

Christopher A. Broderick, Michael D. Dunne, Daniel S. P. Tanner +1

We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy GeC. For ordered alloy supercells, we demon…

cond-mat.mtrl-sci2019

Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals

Daniel S. P. Tanner, Miguel A. Caro, Stefan Schulz +1

Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The m…

cond-mat.mtrl-sci2019

Comparison of first principles and semi-empirical models of the structural and electronic properties of GeSn alloys

Edmond J. O'Halloran, Christopher A. Broderick, Daniel S. P. Tanner +2

We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of GeSn$_{x…

cond-mat.mtrl-sci2016

Random alloy fluctuations and structural inhomogeneities in -plane InGaN quantum wells: theory of ground and excited electron and hole states

Daniel S. P. Tanner, Miguel A. Caro, Eoin P. O'Reilly +1

We present a detailed theoretical analysis of the electronic structure of -plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic struc…