D. Tanner

activity

20162021

most citedElectronic structure evolution in dilute carbide Ge

_{1 - x}

_{x}

alloys and implications for device applications

12 citations · 12 across the 2 of their papers we have counts for

collaborators

Showing 2019Show all

3 papers · 1 filter

cond-mat.mtrl-sci2019★ 12 cited

Electronic structure evolution in dilute carbide Ge $_{1 - x}$ C $_{x}$ alloys and implications for device applications

Christopher A. Broderick, Michael D. Dunne, Daniel S. P. Tanner +1

We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge $_{1 - x}$ C $_{x}$ . For ordered alloy supercells, we demon…

cond-mat.mtrl-sci2019

Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals

Daniel S. P. Tanner, Miguel A. Caro, Stefan Schulz +1

Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The m…

cond-mat.mtrl-sci2019

Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge $_{1 - x}$ Sn $_{x}$ alloys

Edmond J. O'Halloran, Christopher A. Broderick, Daniel S. P. Tanner +2

We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of Ge $_{1 - x}$ Sn$_{x…

Electronic structure evolution in dilute carbide Ge1−x​Cx​ alloys and implications for device applications

Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals

Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge1−x​Snx​ alloys

Electronic structure evolution in dilute carbide Ge $_{1 - x}$ C $_{x}$ alloys and implications for device applications

Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge $_{1 - x}$ Sn $_{x}$ alloys