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20162021
most citedElectronic structure evolution in dilute carbide GeC alloys and implications for device applications

12 citations · 12 across the 2 of their papers we have counts for

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cond-mat.mes-hall2020

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…