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20142021
most citedA physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data

48 citations · 251 across the 14 of their papers we have counts for

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6 papers · 1 filter

physics.app-ph2021★ 11 cited

Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications

Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6

The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…

physics.app-ph2020★ 18 cited

A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances

Anibal Pacheco-Sanchez, Javier N. Ramos-Silva, Eloy Ramirez-Garcia +1

A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of co…

physics.app-ph2020★ 8 cited

Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies

Anibal Pacheco-Sanchez, David Jiménez

The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degrad…

physics.app-ph2020★ 16 cited

Contact resistance extraction of graphene FET technologies based on individual device characterization

Anibal Pacheco-Sanchez, Pedro C. Feijoo, David Jiménez

Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different…

physics.app-ph2020★ 17 cited

The 2D pn Junction Driven Out-of-Equilibrium

Ferney A. Chaves, Pedro C. Feijoo, David Jiménez

The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junctio…

physics.app-ph2019★ 17 cited

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

Pedro Carlos Feijoo, Francisco Pasadas, Marlene Bonmann +10

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numer…