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20142021
most citedA physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data

48 citations · 251 across the 14 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

8 papers · 1 filter

cond-mat.mes-hall2020★ 4 cited

Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies

Leslie M. Valdez-Sandoval, Eloy Ramirez-Garcia, David Jiménez +1

In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of…

cond-mat.mes-hall2020★ 14 cited

Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments

Giovanni Spinelli, Patrizia Lamberti, Vincenzo Tucci +2

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon ele…

cond-mat.mes-hall2019★ 20 cited

Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs

Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +6

Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications dem…

cond-mat.mes-hall2016★ 36 cited

Short channel effects in graphene-based field effect transistors targeting radio-frequency applications

Pedro C. Feijoo, David Jiménez, Xavier Cartoixà

Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrate…

cond-mat.mes-hall2015★ 6 cited

Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment

Francisco Pasadas, David Jiménez

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the…

cond-mat.mes-hall2015★ 48 cited

A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data

Ferney A. Chaves, David Jiménez, Abhay A. Sagade +4

The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable comp…