252 citations · 1.7k across the 47 of their papers we have counts for
15 papers · 1 filter
A telecom O-band emitter in diamond
Sounak Mukherjee, Zi-Huai Zhang, Daniel G. Oblinsky +15
Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range,…
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Natalia Alyabyeva, Jacques Ding, Mylène Sauty +7
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon fac…
Phase transformation-induced superconducting aluminium-silicon alloy rings
B. C. Johnson, M. Stuiber, D. L. Creedon +8
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We…
Isotopic enrichment of silicon by high fluence Si ion implantation
D. Holmes, B. C. Johnson, C. Chua +8
Spins in the `semiconductor vacuum' of silicon-28 (Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of Si is re…
High resolution spectroscopy of individual erbium ions in strong magnetic fields
Gabriele G. de Boo, Chunming Yin, Miloš Rančić +4
In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneousl…
Low temperature properties of whispering gallery modes in isotopically pure silicon 28
Jeremy Bourhill, Daniel L. Creedon, Maxim Goryachev +3
Whispering Gallery (WG) mode resonators have been machined from a boule of single-crystal isotopically pure silicon-28. Before machining, the as-grown rod was measured in a cavity,…
Impact of surface functionalisation on the quantum coherence of nitrogen vacancy centres in nanodiamond
R. G. Ryan, A. Stacey, K. M. O'Donnell +5
Nanoscale quantum probes such as the nitrogen-vacancy centre in diamond have demonstrated remarkable sensing capabilities over the past decade as control over the fabrication and m…
Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
L. H. Willems van Beveren, R. Liu, H. Bowers +4
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase…
Development of nanowire devices with quantum functionalities
Michael Stuiber, Laurens Willems van Beveren, Brett Johnson +5
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can be…
Single-photon emitting diode in silicon carbide
A. Lohrmann, N. Iwamoto, Z. Bodrog +7
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication p…
Single photon emission from ZnO nanoparticles
Sumin Choi, Brett C. Johnson, Stefania Castelletto +3
Room temperature single photon emitters are very important resources for photonics and emerging quantum technologies. In this work we study single photon emission from defect cente…
Engineering chromium related single photon emitters in single crystal diamond
I Aharonovich, S Castelletto, B C Johnson +2
Color centers in diamond as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently disco…
Intrinsic and dopant enhanced solid phase epitaxy in amorphous germanium
B. C. Johnson, P. Gortmaker, J. C. McCallum
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Chromium single photon emitters in diamond fabricated by ion implantation
Igor Aharonovich, Stefania Castelletto, Brett C. Johnson +4
Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of…