activity
20102026
most citedPrecision tomography of a three-qubit donor quantum processor in silicon

252 citations · 1.7k across the 47 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2023

Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond

Nicholas F. L. Collins, Alexander M. Jakob, Simon G. Robson +8

Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computa…

cond-mat.mes-hall2020★ 54 cited

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Mateusz T. Mądzik, Arne Laucht, Fay E. Hudson +6

Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced…

cond-mat.mes-hall2020★ 80 cited

Imaging domain reversal in an ultrathin van der Waals ferromagnet

David A. Broadway, Sam C. Scholten, Cheng Tan +12

The recent isolation of two-dimensional van der Waals magnetic materials has uncovered rich physics that often differs from the magnetic behaviour of their bulk counterparts. Howev…

cond-mat.mes-hall2020★ 9 cited

Scanned single-electron probe inside a silicon electronic device

Kevin S. H. Ng, Benoit Voisin, Brett C. Johnson +3

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable…

cond-mat.mes-hall2019★ 38 cited

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Mateusz T. Mądzik, Thaddeus D. Ladd, Fay E. Hudson +8

The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of…

cond-mat.mes-hall2018★ 32 cited

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik +12

We analyze the electron spin relaxation rate of individual ion-implanted P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with…

cond-mat.mes-hall2018★ 3 cited

Giant, anomalous piezo-impedance of silicon-on-insulator

Heng Li, Christopher Tao-Kuan Lew, Brett Johnson +3

A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response…