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Electron Transport across Vertical Silicon / MoS / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors
Melkamu Belete, Olof Engström, Sam Vaziri +4
Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS) and graphene are investigated with respect to the vertical current conduction mechanism. The measured…
Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
Melkamu Belete, Satender Kataria, Aykut Turfanda +4
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of…
Few-Layer MoS/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
Andreas Bablich, Daniel S. Schneider, Paul Kienitz +11
Few-layer molybdenum disulfide (FL-MoS) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown b…
Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Piotr J Cegielski, Anna Lena Giesecke, Stefanie Neutzner +11
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs…