412 citations · 2.4k across the 64 of their papers we have counts for
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Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang +2
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiG…
Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
M. Yu. Melnikov, A. A. Shakirov, A. A. Shashkin +3
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature…
Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin +3
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers , 2, 3, 4, and 6 in an ultraclean strongly i…
Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin +3
We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplan…
Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +3
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in s…
Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection
D. I. Golosov, I. Shlimak, A. Butenko +2
We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic long…
Electron transport in a slot-gate Si MOSFET
I. Shlimak, v. Ginodman, A. Butenko +2
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and fi…
Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime
I. Shlimak, V. Ginodman, K. -J. Friedland +1
We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic f…
Reflection symmetry at a B=0 metal-insulator transition in two dimensions
D. Simonian, S. V. Kravchenko, M. P. Sarachik
We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility…