86 citations · 278 across the 5 of their papers we have counts for
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Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
K. Lai, W. Pan, D. C. Tsui +3
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure wi…
The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
K. Lai, W. Pan, D. C. Tsui +3
Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterost…
Microwave Resonance of 2D Wigner Crystal around integer Landau fillings
Yong P. Chen, R. M. Lewis, L. W. Engel +4
We have observed a resonance in the real part of the finite frequency diagonal conductivity using microwave absorption measurements in high quality 2D electron systems near {\em in…
Spin-related transport in ultra small Si quantum dots
Leonid P. Rokhinson, L. J. Guo, D. C. Tsui +1
We investigated electron transport through ultra small Si quantum dots. We found that the -dependence of energy levels is dominated by the Zeeman shift, allowing us to measure t…
Non-Kondo zero bias anomaly in electronic transport through an ultra-small Si quantum dot
L. P. Rokhinson, L. J. Guo, S. Y. Chou +1
We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate…