131 citations · 864 across the 23 of their papers we have counts for
15 papers · 1 filter
Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations
Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well a…
Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…
Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume
Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld +8
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution o…
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Jesús Herranz, Pierre Corfdir, Esperanza Luna +8
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optica…
Structural properties of CoTiSi films on GaAs(001)
B Jenichen, J Herfort, M Hanke +6
CoTiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray dif…
Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures
U. Jahn, M. Musolino, J. Lähnemann +8
Several ten m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN…
Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)
Bernd Jenichen, Uwe Jahn, Andrei Nikulin +2
Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe…
Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
S. Nakhaie, J. M. Wofford, T. Schumann +5
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN fi…
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Mattia Musolino, Abbes Tahraoui, Friederich Limbach +5
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by mol…
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy
Jonas Lähnemann, Christian Hauswald, Martin Wölz +4
(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emi…
Luminescence associated with stacking faults in GaN
Jonas Lähnemann, Uwe Jahn, Oliver Brandt +3
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matri…
Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Benjamin Wilsch, Uwe Jahn, Bernd Jenichen +2
The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray…
Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
Uwe Jahn, Jonas Lähnemann, Carsten Pfüller +6
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that opt…
Direct experimental determination of the spontaneous polarization of GaN
Jonas Lähnemann, Oliver Brandt, Uwe Jahn +8
We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of…
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Jonas Lähnemann, Oliver Brandt, Carsten Pfüller +7
We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated…