131 citations · 864 across the 23 of their papers we have counts for
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Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
Johannes K. Zettler, Pierre Corfdir, Christian Hauswald +10
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly…
Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons
B Jenichen, U Jahn, A Nikulin +3
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a c…
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
C. Sinito, P. Corfdir, C. Pfüller +14
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high stru…
Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
Jonas Lähnemann, Megan O. Hill, Jesús Herranz +12
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum…
Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant
Ryan B. Lewis, Pierre Corfdir, Jesús Herranz +4
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can p…
Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime
Jonas Lähnemann, Timur Flissikowski, Martin Wölz +4
Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demo…
Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
Oliver Brandt, Sergio Fernández-Garrido, Johannes K. Zettler +4
Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus form…