11 citations · 49 across the 9 of their papers we have counts for
9 papers
Extended defects as a source of phonon confinement in polycrystalline Si and Ge films
Larisa V. Arapkina, Kirill V. Chizh, Oleg V. Uvarov +9
We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers wi…
Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation
Larisa V. Arapkina, Kirill V. Chizh, Vladimir P. Dubkov +2
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxatio…
Influence of the thickness of Si and Ge films deposited on SiN/SiO/Si substrates on their structure and diffusion of hydrogen atoms from SiN layers
Larisa V. Arapkina, Kirill V. Chizh, Dmitry B. Stavrovskii +5
The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric SiN/SiO/…
Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations
Mikhail S. Storozhevykh, Larisa V. Arapkina, Sergey M. Novikov +4
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin SiGe layers of varying composition and complex…
The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy
Mikhail S. Storozhevykh, Larisa V. Arapkina, Sergey M. Novikov +3
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge…
Ge clusters and wetting layers forming from granular films on the Si(001) surface
M. S. Storozhevykh, L. V. Arapkina, V. A. Yuryev
The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and anne…
Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C
Mikhail S. Storozhevykh, Larisa V. Arapkina, Vladimir A. Yuryev
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically c…
Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
K. V. Chizh, V. A. Chapnin, V. P. Kalinushkin +3
Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and…
Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh +8
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-s…