Extended defects as a source of phonon confinement in polycrystalline Si and Ge films

Larisa V. Arapkina, Kirill V. Chizh, Oleg V. Uvarov +9

We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers wi…