M. S. Storozhevykh

activity

20122024

most citedMetal silicide/poly-Si Schottky diodes for uncooled microbolometers

11 citations · 49 across the 9 of their papers we have counts for

collaborators

Showing 2021Show all

2 papers · 1 filter

cond-mat.mtrl-sci2021

Influence of the thickness of Si and Ge films deposited on Si $_{3}$ N $_{4}$ /SiO $_{2}$ /Si substrates on their structure and diffusion of hydrogen atoms from Si $_{3}$ N $_{4}$ layers

Larisa V. Arapkina, Kirill V. Chizh, Dmitry B. Stavrovskii +5

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si $_{3}$ N $_{4}$ /SiO $_{2}$ /…

cond-mat.mtrl-sci2021★ 10 cited

Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations

Mikhail S. Storozhevykh, Larisa V. Arapkina, Sergey M. Novikov +4

Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si $_{x}$ Ge $_{1 - x}$ layers of varying composition and complex…

Influence of the thickness of Si and Ge films deposited on Si3​N4​/SiO2​/Si substrates on their structure and diffusion of hydrogen atoms from Si3​N4​ layers

Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations

Influence of the thickness of Si and Ge films deposited on Si $_{3}$ N $_{4}$ /SiO $_{2}$ /Si substrates on their structure and diffusion of hydrogen atoms from Si $_{3}$ N $_{4}$ layers