Ge clusters and wetting layers forming from granular films on the Si(001) surface

Abstract

The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at 600C in conditions of a closed system, the Ge granular film transforms to the usual wetting layer and Ge clusters with multimodal size distribution and the Ge oval drops having the highest number density. After the long-term thermal treatment of the Ge film at the same temperature, Ge drops disappear; the large clusters increase their sizes at the expense of the smaller ones. The total density of Ge clusters on the surface drastically decreases. The wetting layer mixed c(4 x 2) + p(2 x 2) reconstruction transforms to the single c(4 x 2) one which is likely thermodynamically favoured. Pyramids or domes are not observed on the surface after any annealing.

A paper presented at the 17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, 23-27 November 2015, St. Petersburg, Russia

References in corpus (5)

• CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
• An initial phase of Ge hut array formation at low temperature on Si(001)
• Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C
• Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C
• On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer