Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer
arXiv:1105.6012 · doi:10.1063/1.4707936
Abstract
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of {105}-faceted clusters on the Ge wetting layer have been observed at high temperatures: Pyramids have been observed to nucleate via the previously described formation of strictly determined structures, resembling blossoms, composed by 16 dimers grouped in pairs and chains of 4 dimes on tops of the wetting layer M x N patches, each on top of a separate single patch, just like it goes on at low temperatures; an alternative process consists in faceting of shapeless heaps of excess Ge atoms which arise in the vicinity of strong sinks of adatoms, such as pits or steps. The latter process has never been observed at low temperatures; it is typical only for the high-temperature deposition mode.
13 pages, 4 figures; a revised version
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Cited by in corpus (7)
- Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
- Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C
- On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
- Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates
- Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM
- Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation
- Ge clusters and wetting layers forming from granular films on the Si(001) surface