25 citations · 46 across the 25 of their papers we have counts for
25 papers
A comprehensive model of high-concentration phosphorus diffusion in silicon
O. I. Velichko
A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a tempe…
Interstitial diffusion of arsenic in silicon
O. I. Velichko
The mechanism underlying the long-range interstitial migration of nonequilibrium impurity interstitial species is used to simulate arsenic redistribution in ion implantation. An ex…
On concentration dependence of arsenic diffusivity
O. I. Velichko
An analysis of the equations used for modeling thermal arsenic diffusion in silicon has been carried out. It was shown that for arsenic diffusion governed by the vacancy-impurity p…
Different shapes of impurity concentration profiles formed by long-range interstitial migration
O. I. Velichko
A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is…
Radiation-enhanced diffusion of impurity atoms in silicon layers
O. I. Velichko
Modeling of the phosphorus radiation-enhanced diffusion in the course of implantation of high-energy protons into an elevated-temperature silicon substrate and during its treatment…
Analytical solution of diffusion equation for point defects
O. I. Velichko
The analytical solution of the equation describing diffusion of intrinsic point defects has been obtained for a one-dimensional finite-length domain. This solution is intended for…