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20052008
most citedAnalytical solution of the equations describing interstitial migration of impurity atoms

2 citations · 2 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2005

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

O. I. Velichko, A. M. Mironov, V. A. Tsurko +1

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed…