Simulation of boron diffusion during low-temperature annealing of implanted silicon
arXiv:1207.3512 · doi:10.1007/s00339-012-7378-4
Abstract
Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials
16 pages, 3 figures